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Journal Articles

Synthesis and characterization of iodovanadinite using PdI$$_{2}$$, an iodine source for the immobilisation of radioiodine

Johnstone, E. V.*; Bailey, D. J.*; Lawson, S.*; Stennett, M. C.*; Corkhill, C. L.*; Kim, M.*; Heo, J.*; Matsumura, Daiju; Hyatt, N. C.*

RSC Advances (Internet), 10(42), p.25116 - 25124, 2020/07

 Times Cited Count:3 Percentile:15.14(Chemistry, Multidisciplinary)

Journal Articles

Coupling the advection-dispersion equation with fully kinetic reversible/irreversible sorption terms to model radiocesium soil profiles in Fukushima Prefecture

Kurikami, Hiroshi; Malins, A.; Takeishi, Minoru; Saito, Kimiaki; Iijima, Kazuki

Journal of Environmental Radioactivity, 171, p.99 - 109, 2017/05

 Times Cited Count:14 Percentile:45.59(Environmental Sciences)

A modified diffusion-sorption-fixation model (mDSF) is proposed to describe the vertical migration of radiocesium in soils following fallout. The model introduces kinetics for reversible sites, meaning that the exponential-shape radiocesium distribution can be reproduced immediately following fallout. The initial relaxation mass depth of the distribution is determined by the diffusion length, which depends on the distribution coefficient, sorption rate and dispersion coefficient. The model captures the long tails of the radiocesium distribution at large depths. These tails are caused by different rates for kinetic sorption and desorption.

Journal Articles

Change in the electrical characteristics of p-channel 6H-SiC MOSFETs by $$gamma$$-ray irradiation

Oshima, Takeshi; Ito, Hisayoshi

Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.191 - 194, 2004/10

no abstracts in English

Journal Articles

Reliable method for fission source convergence of Monte Carlo criticality calculation with Wielandt's method

Yamamoto, Toshihiro; Miyoshi, Yoshinori

Journal of Nuclear Science and Technology, 41(2), p.99 - 107, 2004/02

 Times Cited Count:38 Percentile:90.02(Nuclear Science & Technology)

A new algorithm of Monte Carlo criticality calculations for implementing Wielandt's method is developed. In this algorithm, part of fission neutrons emitted during random walk processes are tracked within the same generation, and thus a fission source distribution in the next generation spread more widely. Applying this method intensifies a neutron interaction effect even in a loosely-coupled array where conventional Monte Carlo criticality calculation methods have difficulties, and a converged fission source distribution can be obtained with fewer generations. Computing time spent for one generation, however, increases because of tracking fission neutrons within the same generation, which eventually results in an increase of total computing time up to convergence. However, since a fission source convergence is attained with fewer source iterations, a reliable determination of convergence can easily be made even in a system with a slow convergence.

Journal Articles

Electrical characteristics of interface defects in oxides grown at 1200 $$^{circ}$$C in dry oxygen ambient on silicon carbide and their thermal annealing effects

Yoshikawa, Masahito; Ishida, Yuki*; Jikimoto, Tamotsu*; Hijikata, Yasuto*; Ito, Hisayoshi; Okumura, Hajime*; Takahashi, Tetsuo*; Tsuchida, Hidekazu*; Yoshida, Sadafumi*

Denshi Joho Tsushin Gakkai Rombunshi, C, 86(4), p.426 - 433, 2003/04

no abstracts in English

Journal Articles

In-vessel type control rod drive mechanism using magnetic force latching for a very small reactor

Yoritsune, Tsutomu; Ishida, Toshihisa; Imayoshi, Sho*

Journal of Nuclear Science and Technology, 39(8), p.913 - 922, 2002/08

 Times Cited Count:4 Percentile:29.2(Nuclear Science & Technology)

no abstracts in English

JAEA Reports

Experimental evaluation of seattered thermal neutrons from various jig materials for use in fixing detectors for the calibration

Shimizu, Shigeru; Nemoto, Hisashi*; Kurosawa, Koji*; Yoshizawa, Michio

JAERI-Tech 2000-041, 31 Pages, 2000/05

JAERI-Tech-2000-041.pdf:1.35MB

no abstracts in English

Journal Articles

Effects of steam annealing on electrical characteristics of 3C-SiC metal-oxide-semiconductor structures

Yoshikawa, Masahito; Kojima, Kazutoshi; Oshima, Takeshi; Ito, Hisayoshi; Okada, Sohei; Ishida, Yuki*

Materials Science Forum, 338-342, p.1129 - 1132, 2000/00

no abstracts in English

Journal Articles

Effects of steam annealing on CV characteristics of 4H-SiC MOS structures

Yoshikawa, Masahito; Takahashi, Kunimasa*; Oshima, Takeshi; Kitabatake, Makoto*; Ito, Hisayoshi

Proceedings of 1st International Workshop on Ultra-Low-Loss Power Device Technology (UPD2000), p.199 - 200, 2000/00

no abstracts in English

Journal Articles

Radiation-induced trapped charge in metal-nitride-oxide-semiconductor structure

Takahashi, Yoshihiro*; Onishi, Kazunori*; Fujimaki, Takeshi*; Yoshikawa, Masahito

IEEE Transactions on Nuclear Science, 46(6), p.1578 - 1585, 1999/12

 Times Cited Count:23 Percentile:83.04(Engineering, Electrical & Electronic)

no abstracts in English

JAEA Reports

Porosity and Density of Fractured Zone at the Kamaishi Mine

Sato, Haruo

JNC TN8400 99-061, 9 Pages, 1999/10

JNC-TN8400-99-061.pdf:1.43MB

The porosities and dry densities for rock samples sampled from a fractured zone (fracture type C: composed of intact ganodiorite, altered ganodiorite and fracture fillings) at the Kamaishi mine were obtained by a water saturation (intrusion) method as input parameters for nuclide migration analysis in performance assessment of the geological disposal of high-level radioactive waste. Consequently, the average porosity, 8.6$$pm$$0.43% was higher than those of fracture fillings, altered garnodiorite and intact ganodiorite composing fracture type B with a single fracture taken from the Kamaishi mine so far. While, the average dry density, 2.43$$pm$$0.0089 Mg$$cdot$$m$$^{-3}$$, was lower than those of rocks composing the fracture type B. Based on this, it is predicted that radionuclides are the easiest to migrate in the fracture zone.

Journal Articles

$$gamma$$-ray irradiation effects on 6H-SiC MOSFET

Oshima, Takeshi; Yoshikawa, Masahito; Ito, Hisayoshi; Aoki, Yasushi; Nashiyama, Isamu

Mater. Sci. Eng. B, 61-62, p.480 - 484, 1999/00

 Times Cited Count:23 Percentile:72.93(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Generation of interface traps and oxide-trapped charge in 6H-SiC metal-oxide-semiconductor transistors by $$gamma$$-ray irradiation

Oshima, Takeshi; Yoshikawa, Masahito; Ito, Hisayoshi; Aoki, Yasushi; Nashiyama, Isamu

Japanese Journal of Applied Physics, Part 2, 37(8B), p.L1002 - L1004, 1998/08

 Times Cited Count:15 Percentile:57.71(Physics, Applied)

no abstracts in English

Journal Articles

Effects of gamma-ray irradiation and the mechanisms on electrical characteristics of SiC metal-oxide-semiconductor structures

Yoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; *; Onishi, K.*; Okumura, Hajime*; Yoshida, Sadafumi*

Denshi Joho Tsushin Gakkai Rombunshi, C-II, 81(1), p.140 - 150, 1998/01

no abstracts in English

Journal Articles

A Method of decomposing carbon dioxide for fixation of carbon-14

Sakurai, Tsutomu; ;

Journal of Nuclear Science and Technology, 35(1), p.76 - 81, 1998/01

 Times Cited Count:3 Percentile:31.9(Nuclear Science & Technology)

no abstracts in English

Journal Articles

Effects of $$gamma$$-ray irradiation on the electrical characteristics of SiC metal-oxide-semiconductor structures

Yoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Takahashi, Yoshihiro*; Onishi, K.*; Okumura, Hajime*; Yoshida, Sadafumi*

Electronics and Communication in Japan., Part2, 81(10), p.37 - 47, 1998/00

no abstracts in English

Journal Articles

Generation mechanisms of trapped charges in oxide layers of 6H-SiC MOS structures irradiated with $$gamma$$-rays

Yoshikawa, Masahito; *; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; *; Onishi, K.*; Okumura, Hajime*; Yoshida, Sadafumi*

Mater. Sci. Forum, 264-268, p.1017 - 1020, 1998/00

no abstracts in English

Journal Articles

Influence of $$gamma$$-ray irradiation on 6H-SiC MOSFETs

Oshima, Takeshi; Yoshikawa, Masahito; Ito, Hisayoshi; Nashiyama, Isamu; Okada, Sohei

Proceedings of 3rd International Workshop on Radiation Effects on Semiconductor Devices for Space Application, p.22 - 27, 1998/00

no abstracts in English

JAEA Reports

A Study of burnup analysis method for irradiation test of rock-like plutonium fuel sample performed at JRR-3

Nakano, Yoshihiro; Takano, Hideki; Akie, Hiroshi

JAERI-Research 97-051, 31 Pages, 1997/07

JAERI-Research-97-051.pdf:2.41MB

no abstracts in English

Journal Articles

Formation of oxide-trapped charges in 6H-SiC MOS structures

Yoshikawa, Masahito; *; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*

Radiation Physics and Chemistry, 50(5), p.429 - 433, 1997/00

 Times Cited Count:0 Percentile:0.01(Chemistry, Physical)

no abstracts in English

112 (Records 1-20 displayed on this page)